| 发明名称 |
SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor substrate includes a substrate including a plurality of semispherical protrusions disposed at an interval on a first plane of the substrate, and a first semiconductor layer disposed on the first plane of the substrate. |
| 申请公布号 |
US2016133792(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201614997198 |
申请日期 |
2016.01.15 |
| 申请人 |
Seoul Viosys Co., Ltd |
发明人 |
Sakai Shiro |
| 分类号 |
H01L33/32;H01L33/20 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor substrate, comprising:
a substrate comprising a plurality of semispherical protrusions disposed at an interval on a first plane of the substrate; and a first semiconductor layer disposed on the first plane of the substrate. |
| 地址 |
Ansan-si KR |
