发明名称
摘要 A process for forming a dual damascene structure. The process includes forming a stack including insulating layers and a stop layer where two masks are formed above the stack. One of the masks is used to form via or contact openings in the insulating layers and the second mask is used to form grooves for interconnections in the insulating layers.
申请公布号 JP5334616(B2) 申请公布日期 2013.11.06
申请号 JP20090032389 申请日期 2009.02.16
申请人 发明人
分类号 H01L21/768;H01L23/522;H01L21/316;H01L21/3205;H01L23/52 主分类号 H01L21/768
代理机构 代理人
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