| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving carrier mobility as temperature rises. SOLUTION: The semiconductor device includes: a first insulated-gate field-effect transistor nMOS1 having electrons as carriers; a second insulated-gate field-effect transistor pMOS2 having holes as carriers; a first element isolation insulating film 11-1 buried in a groove in an element isolation region of a semiconductor substrate, having a negative expansion coefficient, and applying a tensile stress by operation heat to the first insulated-gate field-effect transistor; and a second element isolation insulating film 11-2 buried in the groove in the element isolation region of the semiconductor substrate, having a positive expansion coefficient, and applying a compressive stress by the operation heat to the second insulated-gate field-effect transistor. COPYRIGHT: (C)2010,JPO&INPIT
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