发明名称 |
Nitride semiconductor free-standing substrate and method for making same |
摘要 |
A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 in a section parallel to a surface of the substrate and inside the substrate. A method for making the nitride semiconductor free-standing substrate includes a nitride semiconductor crystal growth step of growing on a heterosubstrate a nitride semiconductor crystal including an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 by adjusting a growth condition at an initial growth stage of the nitride semiconductor crystal, and a separation step for separating the grown nitride semiconductor crystal from the heterosubstrate to form the nitride semiconductor free-standing substrate.
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申请公布号 |
US2009160026(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080155759 |
申请日期 |
2008.06.09 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
SUZUKI TAKAYUKI;MEGURO TAKESHI;ERI TAKESHI |
分类号 |
H01L21/20;C30B29/38;H01L21/205;H01L29/20;H01L33/06;H01L33/32;H01S5/343 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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