| 摘要 |
A non-volatile memory device includes a memory cell array at least one block having a plurality of memory cells, and at least one reference cell with respect to each block, an X decoder and a Y decoder for selecting a memory cell for an operation according to an input address, a page buffer for programming data into a memory cell selected by the X decoder and the Y decoder or reading programmed data, and a controller for controlling the memory cell array, the X decoder, the Y decoder and the page buffers to calculate a change in a threshold voltage of the memory cells and compensate for a changed threshold voltage of a memory cell based on a change in a threshold voltage of the reference cell.
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