| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To aim at the miniaturization of a semiconductor integrated circuit device and the acceleration of the operating speed of the device and also to aim at reduction in defect density in an insulating film in the device having third gates. <P>SOLUTION: The semiconductor circuit device has a first conductivity-type well 101 formed in a semiconductor substrate 100, second conductivity type source/drain diffused layer regions 105 in the well 101, a floating gate 103b formed on the substrate 100 via an insulating film 102, a control gate 111a formed via the floating gate 103b and an insulating film 110a, a word line formed by being connected to the control gate, and a third gate 107a which is formed via the substrate, the floating gate, the control gate and the insulating film, and different from the floating gate and the control gate. In this case, the third gates are arranged in such a way that the third gate exists by being embedded in gaps between the floating gate existing in directions vertical to the word line and a channel. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
