发明名称 Contact between element to be driven and thin film transistor for supplying power to element to be driven
摘要 A TFT (20) for controlling the power supplied to an element to be driven (50), such as an organic EL element which operates based on the supplied power, is provided between the element to be driven (50) and a power supply line VL. The TFT (20) and the element to be driven (50) are electrically connected by a wiring layer (40). The contact position between the wiring layer (40) and the TFT (20) and the contact position between the wiring layer (40) and the element to be driven (50) are positioned so as to be distant from each other. Alternatively, at least the contact hole region of a first electrode (52) of the element (50) is covered by a flattening layer. With this structure, it is possible to realize a flatter surface on which to form, for example, the emissive layer of the element to be driven.
申请公布号 US6781153(B2) 申请公布日期 2004.08.24
申请号 US20010966445 申请日期 2001.09.28
申请人 SANYO ELECTRIC CO., INC. 发明人 ANZAI KATSUYA
分类号 H01L51/50;G09F9/30;G09G3/20;G09G3/30;G09G3/32;H01L21/20;H01L21/336;H01L27/08;H01L27/32;H01L29/786;H05B33/00;(IPC1-7):H01L29/04 主分类号 H01L51/50
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