| 摘要 |
<p>A sputtering target which mainly contains zinc sulfide-silicon oxide, and which is formed by using zinc sulfide having a specific surface area of 5-40 m2/g and 0.05-035 wt.% of sulfate radicals (SO4) and by mixing at least 15 mol.% of silicon oxide so as to be uniformly dispersed; and an optical recording medium formed with a phase change type optical disk protection film that uses the target and mainly contains zinc sulfide-silicon oxide. A phase-change type optical disk protection film-forming sputtering target which reduces particles and nodules occurring at sputtering, can improve a mass-productivity with reduced variations in quality, and mainly contains zinc sulfide-silicon oxide having fine crystal grains and a high density, and an optical recording medium formed with the protection film, and a production method for the target.</p> |
