发明名称 |
Semiconductor device and method for protecting such device from a reversed drain voltage |
摘要 |
An LDMOS field effect transistor (80) provides protection against the inadvertent reversal of polarity of voltage applied across the device. To protect an N-channel device, a floating P-type blocking region (82) is provided surrounding the drain region (32). The blocking region (82) is spaced apart from a body region (28) that forms the diffused channel (34) of the transistor (80). A first gate electrode (36) controls the conductivity of the diffused channel (34) and a second gate electrode (84) controls the conductivity of the surface (35) of the blocking region (82).
|
申请公布号 |
US2003008443(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020126562 |
申请日期 |
2002.04.19 |
申请人 |
SICARD THIERRY;MACARY VERONIQUE C. |
发明人 |
SICARD THIERRY;MACARY VERONIQUE C. |
分类号 |
H01L27/02;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|