发明名称 METHOD FOR CLEANING CHEMICAL VAPOR DEPOSITION CHAMBER
摘要 PURPOSE: A method for cleaning a chemical vapor deposition(CVD) chamber is provided to eliminate a metal pollutant from the CVD chamber, the metal pollutant being capable of contaminating succeeding CVD processes. CONSTITUTION: A method for cleaning a chemical vapor deposition(CVD) chamber comprises the steps of: inducing mixing gas including medium gas and cleaning gas into the chamber; exciting the mixing gas so that plasma is formed in the chamber; and cleaning the chamber by the plasma for a predetermined period of time.
申请公布号 KR20000051251(A) 申请公布日期 2000.08.16
申请号 KR19990001585 申请日期 1999.01.20
申请人 UNITED MICROELECTRONICS CORP. 发明人 SAENGWAI S;HONGALLEN;SAIJEISEUN;KUOCHING-I
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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