发明名称 |
METHOD FOR CLEANING CHEMICAL VAPOR DEPOSITION CHAMBER |
摘要 |
PURPOSE: A method for cleaning a chemical vapor deposition(CVD) chamber is provided to eliminate a metal pollutant from the CVD chamber, the metal pollutant being capable of contaminating succeeding CVD processes. CONSTITUTION: A method for cleaning a chemical vapor deposition(CVD) chamber comprises the steps of: inducing mixing gas including medium gas and cleaning gas into the chamber; exciting the mixing gas so that plasma is formed in the chamber; and cleaning the chamber by the plasma for a predetermined period of time.
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申请公布号 |
KR20000051251(A) |
申请公布日期 |
2000.08.16 |
申请号 |
KR19990001585 |
申请日期 |
1999.01.20 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SAENGWAI S;HONGALLEN;SAIJEISEUN;KUOCHING-I |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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