| 摘要 |
In the manufacture of a semi-conductor device a pattern of metal connections held in predetermined relative positions by insulating oxide is formed by a method involving partial oxidation of a metal sheet, and the treated sheet is held in position relative to contacts provided on a semi-conductor body while metal contact areas of the pattern are secured to contacts on the body. The patterned sheet is made by photo-resist masking both sides of an aluminium sheet, briefly etching the sheet in dilute caustic soda, and anodizing both sides of the sheet at room temperature with aqueous sulphuric acid containing glycerine. A 60m sheet may be oxidized completely in this way. In modifications the metal sheet may be masked on only one side before its anodization on both sides to leave an oxide sheet having inlaid conductors; the conductors may then be insulated except at contact areas by removing parts of the masking before completion of anodization or by selective deposition of insulating material after completion of anodization. In a further modification one side only of the metal sheet is anodized, the remaining metallic oxide is then photo-exist masked, and exposed metal areas are etched away to leave a pattern of conductive tracks on an oxide substrate. A suitable etch for metallic aluminium contains 50 vol. % concentrated hydrochloric acid, 1/2 vol. % wetting agent, and distilled water. Conducting parts other than connections may be left in the patterned sheets; these are trimmed off or severed in the completed semi-conductor device. |
