| 摘要 |
PURPOSE:To obtain a chemical vapor growth device easy to operate and operable stably without causing ununifomity in thickness of grown films even if conditions which a substrate holder is electrically contacted with a substrate on which films are deposited are varied, by providing an insulation plate of quartz, mica, ceramics or the like between the substrate holder and the substrate. CONSTITUTION:An insulating plate 10 is provided between a substrate holder 5 and a substrate 8 on which films are deposited. Thus, the insulating plate 10 electrically serves as a capacitor. When high-frequency power is applied by a highfrequency power source 7 to generate high-frequency plasma 9, the high-frequency power is applied to the substrate 8 through the capacitor, or the insulating plate 10. Accordingly, a potential of the substrate is principally determined by a value of the capacitor. This means that, even if an insulating film 11 is provided on the rear face of the substrate or the rear face is contaminated, generation of high-frequency plasma is not affected thereby and uniformity in thickness of the film can be maintained. The insulating plate 10 is thick enough to provide a sufficiently larger impedance in comparison with the impedance provided by the insulation film or contaminant 11 on the rear face of the substrate 8. A thickness of 50 mum or more is effective.
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