Plasma etching method

摘要

In a plasma etching method of performing a plasma etching on an amorphous carbon layer of a substrate to be processed by using an inorganic film as a mask, the substrate being mounted in a processing chamber, the plasma etching on the amorphous carbon layer is performed by using O2 gas as a processing gas and the O2 gas to flow in the processing chamber such that a residence time of the O2 gas becomes 0.37 msec or less. The amorphous carbon layer is used as an etching mask of an etching target film formed on the substrate. The plasma etching is performed by using the O2 gas only.

主权项

1. A plasma etching method comprising:
providing a substrate on which an amorphous carbon layer and an inorganic film are formed; generating a plasma of only O2 gas in a processing chamber; and performing a plasma etching on the amorphous carbon layer by using the inorganic film as a mask and by using the plasma of only the O2 gas, wherein the plasma etching is performed while causing the O2 gas to flow in the processing chamber with a residence time ranging from 1.02 msec to 3.05 msec, wherein the plasma etching is performed at a pressure inside the processing chamber set to be greater than zero and equal to or smaller than 30 mTorr, and wherein the plasma etching is performed at a flow rate of the O2 gas ranging from 450 sccm to 1350 sccm.