发明名称 MAGNETORESISTIVE ELEMENT, MAGNETIC RANDOM ACCESS MEMORY, AND INITIALIZATION METHOD THEREOF
摘要 <p>A magnetoresistive element includes a first ferromagnetic layer (10), a non-magnetic layer (20), and a second ferromagnetic layer (30).  The first ferromagnetic layer (10) having a prolonged shape in the longitudinal direction on a non-magnetic undercoat (50) includes magnetization fixing units (10a, 10b) at the both ends of the longitudinal direction and a magnetic wall moving portion (10c) between the magnetization fixing units (10a, 10b).  The non-magnetic layer (20) is arranged on the magnetic wall moving portion (10c).  The second ferromagnetic layer (30) is arranged on the non-magnetic layer (10) and magnetization thereof is fixed.  The second ferromagnetic layer (30) has a magnetic anisotropy in the film thickness direction.  The magnetization fixing units (10a, 10b) have a magnetic anisotropy in the in-plane direction.  The magnetic wall moving portion (10c) has a magnetic anisotropy in the film thickness direction.</p>
申请公布号 WO2010013566(A1) 申请公布日期 2010.02.04
申请号 WO2009JP61833 申请日期 2009.06.29
申请人 HONJOU HIROAKI;NEC CORPORATION 发明人 HONJOU HIROAKI
分类号 H01L21/8246;G11C11/15;H01L27/105;H01L43/08 主分类号 H01L21/8246
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