发明名称 Faraday system and ion implantation apparatus comprising the faraday system
摘要 A Faraday system is disclosed wherein the Faraday system comprises a Faraday cup adapted to collect an ion beam to generate a current, a suppression electrode adapted to form an electric field adjacent to an inlet of the Faraday cup to prevent secondary electrons from discharging from the Faraday cup in response to the ion beam, and a housing surrounding the Faraday cup and the suppression electrode and comprising a plurality of apertures, wherein each aperture is adapted to selectively receive an ion beam comprising a corresponding type of conductive impurities.
申请公布号 US7429741(B2) 申请公布日期 2008.09.30
申请号 US20060376292 申请日期 2006.03.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK BYUNG-HYUN
分类号 H01J37/04 主分类号 H01J37/04
代理机构 代理人
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