Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers

摘要

The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure:
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ -(O-Ar 1 -O-Ar 2 -O-) m -(O-Ar 3 -O-Ar 4 -O) n -
where Ar 1 , Ar 2 , Ar 3 , and Ar 4 are identical or different aryl radicals, m is 0 to 1, n is 1-m, and at least one of the aryl radicals is grafted to the backbone of the polymer