| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid state image sensing device which can form a transfer electrode of a single layer without generating short circuit of the transfer electrode and narrowing an opening area of a photosensitive part. SOLUTION: A protection film 20 is formed in advance in a position corresponding to a photosensitive part, and a transfer electrode layer 16a is formed in a region not involving the protection film 20. After a gap 16c is formed in the transfer electrode layer 16a in this state, an insulating film 17 is buried inside the gap 16c. After the protection film 20 is removed, a light screening film 19 covering the transfer electrode 16 is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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