| 摘要 |
There is disclosed a semiconductor device comprising a first metal wiring buried in a first wiring groove formed, via a first barrier metal, in a first insulating layer formed on a semiconductor substrate, a second insulating layer formed on the first metal wiring, a via plug formed of a metal buried, via a second barrier metal, in a via hole formed in the second insulating layer, a third insulating layer formed on the second insulating layer in which the via plug is buried, and a second metal wiring buried in a second wiring groove formed in the third insulating layer via a third barrier metal having a layer thickness of layer quality different from that of the second barrier metal.
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