| 摘要 |
A nonvolatile semiconductor memory device includes a memory cell array including nonvolatile memory cells, a verify-purpose sense amplifier which checks data of the memory cell array at a time of a program operation, a data input buffer which receives data from an exterior of the device, and a match/mismatch check circuit which checks whether a password entered from the exterior of the device into the data input buffer matches a password that is retrieved from the memory cell array and checked by the verify-purpose sense amplifier.
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