SELF-REDUCIBLE COPPER(II) SOURCE REAGENTS FOR CHEMICAL VAPOR DEPOSITION OF COPPER METAL

摘要

Volatile low melting solid CU(II) metal complexes are provided which are capable of depositing a copper film on various substrates under CVD conditions in the absence of reducing carrier gas H2. These CU(II) metal complexes are represented by the structure formula: Cu(OCCF3R<1>CH2NHR<2>)2 wherein R<1> is selected from hydrogen, C1-C4 lower-alkyl or perfluorinated C1-C4 lower-alkyl groups, e.g., CH3, and CF3, etc., and wherein R<2> is C1-C6 lower-alkyl or C1-C6 lower-alkene, which may be substituted by one or more fluorine atoms, by a C1-C6 lower-alkoxy group or by a C1-C6 di-lower-alkyl amino group, provided that when R<1> is CF3, R<2> is other than hydrogen or methyl. A process for depositing copper film using these Cu(II) metal complexes is also provided.