APPARATUS AND METHOD FOR ION-IMPLANTATION AND SPUTTERING DEPOSITION

摘要

The present invention relates to ion injection and sputtering in order to provide a method and a device for injecting plasma ions and sputtering to simultaneously or gradually perform ion injection and sputtering processes for the top of materials inside a vacuum chamber without exposing them to the outside by using a conductive sample mount to mount samples and magnetron deposition sources mounted with sputtering targets inside the vacuum chamber. [Reference numerals] (30) RF power device;(40) DC power device;(90) Gas flow control device;(94) Gas storage device;(96) High voltage pulse power device;(98) Vacuum pump