| 摘要 |
A data output control apparatus and method of a semiconductor memory device exactly synchronize the first read data with a clock signal by solving a problem that the first read data is faster than the clock signal as much as a transit time from a voltage level Vddq/2 to a power voltage Vddq or a ground voltage Vssq. For the purpose, the apparatus for sequentially outputting a plurality of read data stored in the semiconductor memory device includes a first path through which a first read data output control signal for controlling the output of the first read data among the plurality of read data is passing, and a second path through which a second data output control signal for controlling the output of the other read data following the first read data among the plurality of read data is passing, wherein the first read data output control signal is delayed as much as the transit time and outputted through the first path in response to a preamble time control signal for reporting the start of a data read operation.
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