发明名称 HIGH PRESSURE CRYSTAL GROWTH APPARATUS
摘要 PURPOSE: A crystal growth apparatus is provided which has an effect on producing a single crystal of nitrogen reaction material at low temperature. CONSTITUTION: The apparatus comprises a bomb(100) filled up with liquid nitrogen(102), a bomb closure(110), a furnace(120) placed in the inner part of the bomb for filling up a raw material, a heating device(130) for transmitting fixed heat to the raw material in the inner part of the furnace(120), a control device(140) for controlling the heating device, and a cooling device(150) for cooling the raw material in the inner part of the furnace(120), placed at the lower part of the bomb(100). The bomb is closed up tight by binding a male screw and a female screw, consisted of material endurable to an internal pressure, and opened at the upper part
申请公布号 KR20000000425(A) 申请公布日期 2000.01.15
申请号 KR19990045720 申请日期 1999.10.21
申请人 JEONG, SE YOUNG 发明人 JEONG, SE YOUNG
分类号 C30B15/02;(IPC1-7):C30B15/02 主分类号 C30B15/02
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