发明名称 |
Increasing the read signal in ferroelectric memories |
摘要 |
Improved sensing of ferroelectric memory cells is disclosed. When a memory access is initiated, the bitlines are precharged to a negative voltage, for example, -0.5 to -1.0V. This increases the effective plateline pulse (VPLH) to VPLH+the magnitude of the negative voltage. This results in an increase in the difference between VHI and VL0 read signals, thereby increasing the sensing window.
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申请公布号 |
US2004076031(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20020103278 |
申请日期 |
2002.03.21 |
申请人 |
ROEHR THOMAS;JOACHIM HANS-OLIVER |
发明人 |
ROEHR THOMAS;JOACHIM HANS-OLIVER |
分类号 |
G11C7/06;G11C7/12;G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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