| 摘要 |
PURPOSE:To obtain a cell operating at high speed and large alpha-ray-resistant strength while inhibiting the increase of the area of the cell by constituting the memory cell of bipolar transistors of two kinds. CONSTITUTION:Bipolar transistors 11 for reading information and bipolar transistors 12 for holding information are shaped, the quantity of charges stored in the transistor 12 is made larger than that of the transistor 11, and charges are stored by information holding currents. Base regions in the transistors 11 and 12 are made common at that time. Collectors for the transistors 12 are used as emitters, charges are stored in the emitter regions, and the quantity of charge storage is increased, thus improving alpha-ray-resistant strength. |
